OSI Optoelectronics, UV-100L Si Photodiode, Through Hole Low Profile
Technical Document
Specifications
Brand
OSI OptoelectronicsWavelength of Peak Sensitivity
254nm
Package Type
Low Profile
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
3
Diode Material
Si
Minimum Wavelength Detected
UV-100L
Maximum Wavelength Detected
254nm
Length
24.76mm
Height
4.826mm
Diameter
25.4mm
Peak Photo Sensitivity
0.14A/W
Series
UV
Shunt Resistance
10000KΩ
Typical Rise Time
5.9ns
Country of Origin
United States
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P.O.A.
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P.O.A.
1
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Technical Document
Specifications
Brand
OSI OptoelectronicsWavelength of Peak Sensitivity
254nm
Package Type
Low Profile
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
3
Diode Material
Si
Minimum Wavelength Detected
UV-100L
Maximum Wavelength Detected
254nm
Length
24.76mm
Height
4.826mm
Diameter
25.4mm
Peak Photo Sensitivity
0.14A/W
Series
UV
Shunt Resistance
10000KΩ
Typical Rise Time
5.9ns
Country of Origin
United States
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products