Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-59
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.9mm
Width
1.6mm
Transistor Material
Si
Height
1.1mm
Country of Origin
Japan
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
P.O.A.
Each (In a Pack of 10) (Exc. Vat)
10
P.O.A.
Each (In a Pack of 10) (Exc. Vat)
Stock information temporarily unavailable.
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-59
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.9mm
Width
1.6mm
Transistor Material
Si
Height
1.1mm
Country of Origin
Japan
Product details


