Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
151 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
Series
Package Type
SEMITOP4
Mounting Type
Through Hole
Channel Type
N
Pin Count
70
Transistor Configuration
Series
Dimensions
55 x 60.25 x 15.08mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Country of Origin
Italy
Product details
Quad IGBT Modules
The series configuration of these Semikron Quad IGBT modules makes them the perfect solution for applications which require a high performance 3-level topology. These compact PCB mounting SEMITOP 3 modules feature single hole fixing with excellent heat transfer and utilise Trench IGBT technology. Typical applications include 3-level DC-AC Inverters and UPS power supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
P.O.A.
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P.O.A.
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Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
151 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
Series
Package Type
SEMITOP4
Mounting Type
Through Hole
Channel Type
N
Pin Count
70
Transistor Configuration
Series
Dimensions
55 x 60.25 x 15.08mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Country of Origin
Italy
Product details
Quad IGBT Modules
The series configuration of these Semikron Quad IGBT modules makes them the perfect solution for applications which require a high performance 3-level topology. These compact PCB mounting SEMITOP 3 modules feature single hole fixing with excellent heat transfer and utilise Trench IGBT technology. Typical applications include 3-level DC-AC Inverters and UPS power supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.