Technical Document
Specifications
Brand
STMicroelectronicsDirection Type
Uni-Directional
Diode Configuration
Array
Maximum Clamping Voltage
13.2V
Minimum Breakdown Voltage
6.9V
Mounting Type
Surface Mount
Package Type
QFN
Maximum Reverse Stand-off Voltage
6.3V
Pin Count
2
Peak Pulse Power Dissipation
1100W
Maximum Peak Pulse Current
80A
ESD protection
Yes
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Dimensions
1.7 x 1.1 x 0.55mm
Maximum Operating Temperature
+150 °C
Height
0.55mm
Width
1.1mm
Test Current
1mA
Maximum Reverse Leakage Current
200nA
Length
1.7mm
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P.O.A.
8000
P.O.A.
8000
Technical Document
Specifications
Brand
STMicroelectronicsDirection Type
Uni-Directional
Diode Configuration
Array
Maximum Clamping Voltage
13.2V
Minimum Breakdown Voltage
6.9V
Mounting Type
Surface Mount
Package Type
QFN
Maximum Reverse Stand-off Voltage
6.3V
Pin Count
2
Peak Pulse Power Dissipation
1100W
Maximum Peak Pulse Current
80A
ESD protection
Yes
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Dimensions
1.7 x 1.1 x 0.55mm
Maximum Operating Temperature
+150 °C
Height
0.55mm
Width
1.1mm
Test Current
1mA
Maximum Reverse Leakage Current
200nA
Length
1.7mm