Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
HIP-247-3
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
398W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
76nC
Forward Voltage Vf
2.6V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Automotive Standard
AEC-Q101
Country of Origin
China
Stock information temporarily unavailable.
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
HIP-247-3
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
398W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
76nC
Forward Voltage Vf
2.6V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Automotive Standard
AEC-Q101
Country of Origin
China


