Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Package Type
H²PAK-7
Series
SCT
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
Italy
Stock information temporarily unavailable.
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
1
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Package Type
H²PAK-7
Series
SCT
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
Italy