Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.52 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
25V
Number of Elements per Chip
1
Transistor Material
SiC
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Stock information temporarily unavailable.
P.O.A.
SiC N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120AG
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Standard
1
P.O.A.
SiC N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120AG
Stock information temporarily unavailable.
Select packaging type
Standard
1
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
Hip247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.52 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
25V
Number of Elements per Chip
1
Transistor Material
SiC