STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Series
SiC MOSFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.203 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
239V
Number of Elements per Chip
1
Transistor Material
SiC
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Stock information temporarily unavailable.
P.O.A.
Each (On a Reel of 1000) (Exc. Vat)
1000
P.O.A.
Each (On a Reel of 1000) (Exc. Vat)
Stock information temporarily unavailable.
1000
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Series
SiC MOSFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.203 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
239V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products