Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Package Type
TO-263
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
310W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
P.O.A.
Each (In a Pack of 2) (Exc. Vat)
Standard
2
P.O.A.
Each (In a Pack of 2) (Exc. Vat)
Stock information temporarily unavailable.
Standard
2
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Package Type
TO-263
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
310W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


