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STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

RS Stock No.: 920-8802Brand: STMicroelectronicsManufacturers Part No.: STD60NF06T4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 2500) (Exc. Vat)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

P.O.A.

Each (On a Reel of 2500) (Exc. Vat)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more