STMicroelectronics STGB10NC60HDT4, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
9.35 mm
Length
10.4mm
Height
4.6mm
Standards/Approvals
RoHS
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Stock information temporarily unavailable.
Standard
5
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Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
20A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Width
9.35 mm
Length
10.4mm
Height
4.6mm
Standards/Approvals
RoHS
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products