Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
299mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Power Dissipation Pd
90W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Country of Origin
Malaysia
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
Stock information temporarily unavailable.
50
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
299mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Power Dissipation Pd
90W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Country of Origin
Malaysia
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


