Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
40V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.7W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.5mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
P.O.A.
Each (On a Reel of 2500) (Exc. Vat)
2500
P.O.A.
Each (On a Reel of 2500) (Exc. Vat)
Stock information temporarily unavailable.
2500
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
40V
Package Type
SOIC
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.7W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Forward Voltage Vf
-1.1V
Maximum Operating Temperature
150°C
Width
4 mm
Height
1.5mm
Length
5mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


