STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

RS Stock No.: 761-0323Brand: STMicroelectronicsManufacturers Part No.: STW34NM60N
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

84 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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P.O.A.

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N
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Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
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7P.O.A.
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9P.O.A.
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13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

84 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more