Taiwan Semi P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-23 TSM2307CX RFG
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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P.O.A.
Each (In a Pack of 25) (Exc. Vat)
Standard
25
P.O.A.
Each (In a Pack of 25) (Exc. Vat)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products