N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

RS Stock No.: 171-3697Brand: Taiwan SemiconductorManufacturers Part No.: TSM2308CX RFG
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Select packaging type

P.O.A.

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C