N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

RS Stock No.: 162-8541Brand: Texas InstrumentsManufacturers Part No.: CSD17308Q3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Number of Elements per Chip

1

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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P.O.A.

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3

P.O.A.

N-Channel MOSFET, 47 A, 30 V, 8-Pin SON Texas Instruments CSD17308Q3
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

47 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Length

3.4mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Number of Elements per Chip

1

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments