Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Width
0.64mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Series
FemtoFET
Height
0.35mm
Product details
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
20
P.O.A.
20
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Width
0.64mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Series
FemtoFET
Height
0.35mm
Product details