Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
45 W
Package Type
TO-220SIS
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
100kHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
45 W
Package Type
TO-220SIS
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
100kHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.