Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-150 mA
Maximum Collector Emitter Voltage
-50 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
120
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
80 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
2 x 1.25 x 0.9mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Dual PNP/PNP Transistors, Toshiba
Bipolar Transistors, Toshiba
P.O.A.
Each (In a Pack of 100) (Exc. Vat)
100
P.O.A.
Each (In a Pack of 100) (Exc. Vat)
Stock information temporarily unavailable.
100
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-150 mA
Maximum Collector Emitter Voltage
-50 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
120
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
80 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
2 x 1.25 x 0.9mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details


