Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
P.O.A.
Each (In a Pack of 50) (Exc. Vat)
Standard
50
P.O.A.
Each (In a Pack of 50) (Exc. Vat)
Standard
50
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
2.7 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand