Toshiba TK090A65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
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P.O.A.
Each (In a Pack of 2) (Exc. Vat)
2
P.O.A.
Each (In a Pack of 2) (Exc. Vat)
Stock information temporarily unavailable.
2
Stock information temporarily unavailable.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products