Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Country of Origin
China
Product details