Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
47 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
15 nC @ 5 V, 29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
5
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
5
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
47 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
15 nC @ 5 V, 29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details