Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Series
TPC
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +20 V
Width
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.52mm
Product details
MOSFET P-Channel, TPC Series, Toshiba
MOSFET Transistors, Toshiba
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
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Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Series
TPC
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +20 V
Width
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.52mm
Product details