Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
2.2mm
Number of Elements per Chip
1
Width
1.35mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Country of Origin
China
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P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
2.2mm
Number of Elements per Chip
1
Width
1.35mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products