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Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF

RS Stock No.: 178-0851Brand: VishayManufacturers Part No.: IRF820PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.41mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

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Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
P.O.A.Each (Supplied as a Tape) (Exc. Vat)
Stock information temporarily unavailable.

P.O.A.

Each (In a Tube of 50) (Exc. Vat)

Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF

P.O.A.

Each (In a Tube of 50) (Exc. Vat)

Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
P.O.A.Each (Supplied as a Tape) (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.41mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF
P.O.A.Each (Supplied as a Tape) (Exc. Vat)