Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Production pack (Tube)
5
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Production pack (Tube)
5
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details