Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

RS Stock No.: 180-8316Brand: VishayManufacturers Part No.: IRFBE30LPBF
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Technical Document

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

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Stock information temporarily unavailable.

P.O.A.

Each (In a Tube of 50) (Exc. Vat)

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (In a Tube of 50) (Exc. Vat)

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin

Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

78nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more