Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Production pack (Tube)
5
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Production pack (Tube)
5
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.8mm
Country of Origin
China
Product details