N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302CDS-T1-E3

RS Stock No.: 146-4436Brand: VishayManufacturers Part No.: SI2302CDS-T1-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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P.O.A.

N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302CDS-T1-E3

P.O.A.

N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302CDS-T1-E3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V