N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3

RS Stock No.: 146-4442Brand: VishayManufacturers Part No.: SI3476DV-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3

P.O.A.

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C