Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.4 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Series
E-Series
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3
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Standard
10
P.O.A.
N-Channel MOSFET, 4.4 A, 800 V, 3-Pin D2PAK Vishay SIHB5N80AE-GE3
Stock information temporarily unavailable.
Select packaging type
Standard
10
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.4 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Series
E-Series
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1