Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.82mm
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.82mm
Country of Origin
China
Product details