Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
25
P.O.A.
25
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.87mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Product details