N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247AC Vishay SIHG28N60EF-GE3

RS Stock No.: 178-0895Brand: VishayManufacturers Part No.: SIHG28N60EF-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Width

5.31mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

20.82mm

Series

EF Series

Country of Origin

China

Product details

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247AC Vishay SIHG28N60EF-GE3

P.O.A.

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247AC Vishay SIHG28N60EF-GE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Width

5.31mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

20.82mm

Series

EF Series

Country of Origin

China

Product details

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more