Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220AB
Series
E Series
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.08 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
Si
Number of Elements per Chip
1
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P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220AB
Series
E Series
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.08 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
Si
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products