Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
650 V
Series
EF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.088 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB Vishay SiHP105N60EF-GE3
50
P.O.A.
N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB Vishay SiHP105N60EF-GE3
Stock information temporarily unavailable.
50
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
650 V
Series
EF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.088 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1