Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.075 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
1
Series
TrenchFET
Country of Origin
China
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P.O.A.
N-Channel MOSFET, 4.3 A, 60 V, 3-Pin SOT-23 Vishay SQ2362ES-T1_GE3
Select packaging type
20
P.O.A.
N-Channel MOSFET, 4.3 A, 60 V, 3-Pin SOT-23 Vishay SQ2362ES-T1_GE3
Stock information temporarily unavailable.
Select packaging type
20
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.075 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
1
Series
TrenchFET
Country of Origin
China