Vishay VS-GB100TS60NPBF Series IGBT Module, 108 A 600 V, 7-Pin INT-A-PAK, Surface Mount

RS Stock No.: 873-2320Brand: VishayManufacturers Part No.: VS-GB100TS60NPBF
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Technical Document

Specifications

Brand

Vishay

Maximum Continuous Collector Current

108 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

390 W

Package Type

INT-A-PAK

Configuration

Series

Mounting Type

Surface Mount

Channel Type

N

Pin Count

7

Switching Speed

8 to 60kHz

Transistor Configuration

Series

Dimensions

94 x 35 x 28mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Italy

Product details

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Vishay VS-GB100TS60NPBF Series IGBT Module, 108 A 600 V, 7-Pin INT-A-PAK, Surface Mount

P.O.A.

Vishay VS-GB100TS60NPBF Series IGBT Module, 108 A 600 V, 7-Pin INT-A-PAK, Surface Mount
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Maximum Continuous Collector Current

108 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

390 W

Package Type

INT-A-PAK

Configuration

Series

Mounting Type

Surface Mount

Channel Type

N

Pin Count

7

Switching Speed

8 to 60kHz

Transistor Configuration

Series

Dimensions

94 x 35 x 28mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Italy

Product details

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.