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(Price shown excludes VAT) 		Part Details Brand Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03
ON Semiconductor 60 A 650 V ±30V 333 W 1 TO-247 G03 Through Hole P 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 3813pF 50µJ +175 °C -55 °C
150V N-Ch 0.052R
Vishay - - - - - - - - - - - - - - - - - - -
150V N-Ch 0.052R
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600V SuperJunction
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600V SuperJunction
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650V/75 FAST IGBT
ON Semiconductor - - - - - - - - - - - - - - - - - - -
650V/75 FAST IGBT
ON Semiconductor - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified N-CHANNEL 100-V (D-S)
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AEQC101 Qualified N-CHANNEL 100-V (D-S)
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AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
Vishay - - - - - - - - - - - - - - - - - - -
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
Vishay - - - - - - - - - - - - - - - - - - -
D Series MOSFET N-CHANNEL 500V
Vishay - - - - - - - - - - - - - - - - - - -
D Series MOSFET N-CHANNEL 500V
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Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
Vishay - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
Vishay - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK® 1212-8 BWL 30V 25moh
Vishay - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK® 1212-8 BWL 30V 25moh
Vishay - - - - - - - - - - - - - - - - - - -
Dual P-Ch PPAK SC70 30V 100mohm @ 4.5V
Vishay - - - - - - - - - - - - - - - - - - -
Dual P-Ch PPAK SC70 30V 100mohm @ 4.5V
Vishay - - - - - - - - - - - - - - - - - - -
Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V
Vishay - - - - - - - - - - - - - - - - - - -
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