MOSFETs

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
SiSH402DN-T1-GE3 N-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 35 A 30 V 0.008 Ω 1.15V 2.2V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1700 pF @ 15 V 28 nC @ 10 V 3.15 x 3.15 x 1.07mm 25 ns TrenchFET 25 ns 82s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -55 °C Si -
TN2106K1-G N-Channel MOSFET, 280 mA, 60 (Minimum) V TN2106, 3-Pin SOT-23 Microchip Technology Microchip Technology N 280 mA 60 (Minimum) V 5 Ω 2V 0.6V 20 V TO-236AB Surface Mount 3 Single Enhancement Driver MOSFET 360 mW 35 pF @ 25 V - 3.04 x 1.4 x 1.02mm 6 ns TN2106 3 ns - 1.4mm 1.02mm 3.04mm 1.8V - +150 °C 1 -55 °C - -
TN2540N8-G N-Channel MOSFET, 260 mA, 400 (Minimum) V TN2540, 3-Pin TO-243AA Microchip Technology Microchip Technology N 260 mA 400 (Minimum) V 12 Ω 2V 0.6V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 95 pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns TN2540 20 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
VP2450N8-G P-Channel MOSFET, 160 mA, 500 (Minimum) V VP2450, 3-Pin SOT-89 Microchip Technology Microchip Technology P 160 mA 500 (Minimum) V 35 Ω 3.5V 1.5V 20 V SOT-89 Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 190 (Maximum) pF @ -25 V - 4.6 x 2.6 x 1.6mm 45 (Maximum) ns VP2450 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
2N7000-G N-Channel MOSFET, 200 mA, 60 (Minimum) V 2N7000, 3-Pin TO-92 Microchip Technology Microchip Technology N 200 mA 60 (Minimum) V 5.3 Ω 3V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 60 (Maximum) pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns 2N7000 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.85V - +150 °C 1 -55 °C - -
DN2625K4-G Dual N-Channel MOSFET, 1.1 A, 250 V Depletion DN2625, 4-Pin DPAK Microchip Technology Microchip Technology N 1.1 A 250 V 3.5 Ω - - 20 V TO-252 Surface Mount 4 Single Depletion - - 800 pF @ 25 V 7.04 @ 1.5 V 0.26 x 0.24 x 0.09in 10 ns DN2625 10 ns - 6.1mm 2.29mm 6.6mm 1.8V - +150 °C 2 -55 °C - -
FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor ON Semiconductor N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V IPAK Through Hole 3 Single Enhancement Power MOSFET 83 W 730 pF @ 400 V 18 nC @ 10 V 6.8 x 2.5 x 6.3mm 34 ns - 12 ns 6s 2.5mm 6.3mm 6.8mm 1.2V - +150 °C 1 -55 °C - -
VN10KN3-G N-Channel MOSFET, 310 mA, 60 (Minimum) V VN10K, 3-Pin TO-92 Microchip Technology Microchip Technology N 310 mA 60 (Minimum) V 7.5 Ω 2.5V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 48 pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns VN10K 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.8V - +150 °C 1 -55 °C - -
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V Microchip Technology - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
TN0106N3-G N-Channel MOSFET, 350 mA, 60 (Minimum) V TN0106, 3-Pin TO-92 Microchip Technology Microchip Technology N 350 mA 60 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0106 2 ns - 4.06mm 5.33mm 5.08mm 1.5V - +150 °C 1 -55 °C - -
TN0110N3-G N-Channel MOSFET, 350 mA, 100 (Minimum) V TN0110, 3-Pin TO-92 Microchip Technology Microchip Technology N 350 mA 100 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0110 2 ns - 4.06mm 5.33mm 5.08mm 1.5V - +150 °C 1 -55 °C - -
2N6661 N-Channel MOSFET, 350 mA, 90 (Minimum) V 2N6661, 3-Pin TO-39 Microchip Technology Microchip Technology N 350 mA 90 (Minimum) V 5 Ω 2V 0.8V 20 V TO-39 Through Hole 3 Single Enhancement Driver MOSFET 6.25 W 50 (Maximum) pF @ 24 V - 0.37 (Dia.) x 0.26in 10 (Maximum) ns 2N6661 10 (Maximum) ns - 9.398 Dia.mm 6.6mm - 1.2V - +150 °C 1 -55 °C - -
NTHL065N65S3F N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 ON Semiconductor ON Semiconductor N 46 A 650 V 65 mΩ 5V 3V ±30 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 337 W 4075 pF @ 400 V 98 nC @ 10 V 15.87 x 4.82 x 20.82mm 78 ns - 34 ns 31s 4.82mm 20.82mm 15.87mm 1.3V - +150 °C 1 -55 °C - -
NTHL110N65S3F N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 ON Semiconductor ON Semiconductor N 30 A 650 V 110 mΩ 5V 3V ±30 V TO-247 Through Hole 3 Single Enhancement Power MOSFET 240 W 2560 pF @ 400 V 58 nC @ 10 V 15.87 x 4.82 x 20.82mm 61 ns - 29 ns 17s 4.82mm 20.82mm 15.87mm 1.3V - +150 °C 1 -55 °C - -
FCP165N65S3 N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 ON Semiconductor ON Semiconductor N 19 A 650 V 165 mΩ 4.5V 2.5V ±30 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 154 W 1500 pF @ 400 V 39 nC @ 10 V 10.67 x 4.7 x 16.3mm 53 ns - 21 ns 12s 4.7mm 16.3mm 10.67mm 1.2V - +150 °C 1 -55 °C - -
-20V Pch+Pch Middle Power MOSFET ROHM P 5 A 20 V 77 mΩ 1.2V 0.5V ±10 V TSMT Surface Mount 8 - Enhancement Power MOSFET 1.5 W 720 pF @ -10 V (N Channel) 10.2 nC @ 4.5 V (N Channel) 3.1 x 2.5 x 0.8mm 70 ns QH8JA1 11 ns 5.5s 2.5mm 0.8mm 3.1mm 1.2V - +150 °C 2 -55 °C - -
-20V Pch+Pch Middle Power MOSFET ROHM P 5 A 20 V 77 mΩ 1.2V 0.5V ±10 V TSMT Surface Mount 8 - Enhancement Power MOSFET 1.5 W 720 pF @ -10 V (N Channel) 10.2 nC @ 4.5 V (N Channel) 3.1 x 2.5 x 0.8mm 70 ns QH8JA1 11 ns 5.5s 2.5mm 0.8mm 3.1mm 1.2V - +150 °C 2 -55 °C - -
0.9V Drive MOSFET N-Ch 50V 200mA SOT-23
  • RS Stock No. 177-6625
  • Brand ROHM
  • Mfr. Part No. RYC002N05T316
ROHM - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
1.1 V to 5.5 V, 3 A, Slew Rate Controlle Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
1.1 V to 5.5 V, 3 A, Slew Rate Controlle Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
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