MOSFETs

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
SiSH402DN-T1-GE3 N-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 35 A 30 V 0.008 Ω 1.15V 2.2V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1700 pF @ 15 V 28 nC @ 10 V 3.15 x 3.15 x 1.07mm 25 ns TrenchFET 25 ns 82s 3.15mm 1.07mm 3.15mm 1.2V +150 °C 1 -55 °C Si -
40V Nch+Pch Middle Power MOSFET ROHM N, P 2 (P Channel) A, 4.5 (N Channel) A 40 (N Channel) V, 40 (P Channel) V 260 (N Channel) mΩ, 59 (N Channel) mΩ 2.5 (N Channel) V, 3 (P Channel) V 1 (N Channel) V, 1 (P Channel) V ±20 (N Channel) V, ±20 (P Channel) V TSMT Surface Mount 8 - Enhancement Power MOSFET 1.5 W 193 pF @ 20 V (N Channel), 450 pF @ -20 V (P Channel) 2.6 nC @ 10 V (N Channel), 9.5 nC @ 10 V (P Channel) 3.1 x 2.5 x 0.8mm 14.8 (N Channel) ns, 35 (P Channel) ns QH8M22 3.9 (N Channel) ns, 8 (P Channel) ns - 2.5mm 0.8mm 3.1mm - +150 °C 2 -55 °C - -
AUIR3313STRL MOSFET AUIR3313, 5-Pin D2PAK Infineon Infineon - - - 13.5 mΩ - - - D2PAK Surface Mount 5 Single - - 2 W - - 10.67 x 9.65 x 4.57mm 80 μs AUIR3313 32 μs - 9.65mm 4.57mm 10.67mm - +150 °C 1 -40 °C - AEC-Q100
AUIR3313STRL MOSFET AUIR3313, 5-Pin D2PAK Infineon Infineon - - - 13.5 mΩ - - - D2PAK Surface Mount 5 Single - - 2 W - - 10.67 x 9.65 x 4.57mm 80 μs AUIR3313 32 μs - 9.65mm 4.57mm 10.67mm - +150 °C 1 -40 °C - AEC-Q100
DN2625K4-G Dual N-Channel MOSFET, 1.1 A, 250 V Depletion DN2625, 4-Pin DPAK Microchip Technology Microchip Technology N 1.1 A 250 V 3.5 Ω - - 20 V TO-252 Surface Mount 4 Single Depletion - - 800 pF @ 25 V 7.04 @ 1.5 V 0.26 x 0.24 x 0.09in 10 ns DN2625 10 ns - 6.1mm 2.29mm 6.6mm 1.8V +150 °C 2 -55 °C - -
Dual MOSFET P-Channel 12V 5.5A TSMT8 ROHM - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Dual MOSFET P-Channel 20V 200mA EMT6 ROHM - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Dual MOSFET P-Channel 30V 2.5A TSST8 ROHM - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Dual N-Ch MOSFET SO-8 60V 41mohm @ 10V 1 Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Dual N-Ch MOSFET SO-8 BWL 20V 4.6mohm @ Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
FET 100V 4.5 MOHM ON Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
FET 100V 8.5 MOHM ON Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
FET 100V 8.5 MOHM ON Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET 600V 28A w/Fast Diode TO-220AB Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET 600V 28A w/Fast Diode TO-220FP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET 600V 28A w/Fast Diode TO-247AC Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Dual N-Channel 60V 295mA ESD SC88 ON Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET N-Ch 20V 238mA ESD Signal SOT416 ON Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET N-Ch 40V 100A 1.4m OptiMOS TDSON8 Infineon - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET N-Ch 80V 2.6m OptiMOS5 TDSON8 Infineon - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
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