MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Vishay SI2374DS-T1-GE3 N-channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-363 Vishay N 5.9 A 20 V 0.041 Ω 1V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W 735 pF 13.4 nC 3.04 x 1.4 x 1.02mm 16 ns - 10 ns 29s 1.02mm 1.4mm 3.04mm - +150 °C 1 -55 °C -
Vishay SI3457CDV-T1-GE3 P-channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP6 Vishay P 5.1 A 30 V 0.013 Ω -3V -1V ±20 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 3 W 450 pF 10 nC 3.1 x 1.7 x 1mm 20 ns - 40 ns 8s 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI3473CDV-T1-GE3 P-channel MOSFET, 8 A, 12 V, 6-Pin TSOP6 Vishay P 8 A 12 V 0.036 Ω -1V -0.4V ±8 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 4.2 W 2010 pF 43 nC 3.1 x 1.7 x 1mm 62 ns - 10 ns 30s 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI3476DV-T1-GE3 N-channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay N 4.6 A 80 V 0.126 Ω 3V 1.2V ±20 V SOT-23 Surface Mount 6 Single Enhancement Power MOSFET 3.6 W 195 pF 4.9 nC 3.1 x 1.7 x 1mm 14 ns - 26 ns 7s 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay TP0610K-T1-E3 P-channel MOSFET, 0.185 A, 60 V, 3-Pin SOT-23 Vishay P 0.185 A 60 V 9 Ω -3V -1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 350 mW 23 pF 1.7 nC 3.04 x 2.64 x 1.02mm 35 ns - 20 ns - 1.02mm 2.64mm 3.04mm -1.4V +150 °C 1 -55 °C -
Vishay SI2302CDS-T1-E3 N-channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay N 2.6 A 20 V 0.075 Ω 0.85V 0.4V ±8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 0.71 W - 3.5 nC 3.04 x 1.4 x 1.02mm 30 ns - 8 ns 13s 1.02mm 1.4mm 3.04mm 1.2V +150 °C 1 -55 °C -
Vishay SI2302DDS-T1-GE3 N-channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay N 2.6 A 20 V 0.075 Ω 0.85V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 0.71 W - 3.5 nC 3.04 x 1.4 x 1.02mm 30 ns - 8 ns 13s 1.02mm 1.4mm 3.04mm 1.2V +150 °C 1 -55 °C -
Vishay 2N7002K-T1-GE3 N-channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Vishay N 300 mA 60 V 2 Ω - 1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement - 350 mW 30 pF @ 25 V 0.4 nC @ 4.5 V 3.04 x 1.4 x 1.02mm 35 ns - 35 ns - 1.02mm 1.4mm 3.04mm - +150 °C 1 -55 °C Si
Vishay IRF9640STRLPBF P-channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK Vishay P 6.8 A 200 V 500 mΩ - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 125 W 1200 pF @ -25 V 44 nC @ 10 V 10.67 x 9.65 x 4.83mm 39 ns - 14 ns - 4.83mm 9.65mm 10.67mm - +150 °C 1 -55 °C Si
Vishay IRF9640STRRPBF P-channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK Vishay P 6.8 A 200 V 500 mΩ - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 125 W 1200 pF @ -25 V 44 nC @ 10 V 10.67 x 9.65 x 4.83mm 39 ns - 14 ns - 4.83mm 9.65mm 10.67mm - +150 °C 1 -55 °C Si
Vishay IRFD020 N-channel MOSFET, 2.4 A, 50 V, 4-Pin HVMDIP Vishay N 2.4 A 50 V 100 mΩ - 2V -20 V, +20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W 400 pF @ 25 V 16 nC @ 10 V 5 x 6.29 x 3.37mm 16 ns - 8.7 ns - 3.37mm 6.29mm 5mm - +150 °C 1 -55 °C Si
Vishay IRFIZ24GPBF N-channel MOSFET, 14 A, 60 V, 3-Pin TO-220FP Vishay N 14 A 60 V 100 mΩ - 2V -20 V, +20 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 37 W 640 pF @ 25 V 25 nC @ 10 V - 25 ns - 13 ns - 9.8mm - - - +175 °C 1 -55 °C Si
Vishay IRFP23N50LPBF N-channel MOSFET, 23 A, 500 V, 3-Pin TO-247AC Vishay N 23 A 500 V 235 mΩ - 3V -30 V, +30 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 370 W 3600 pF@ 25 V 150 nC @ 10 V 15.87 x 5.31 x 20.7mm 53 ns - 26 ns - 20.7mm 5.31mm 15.87mm - +150 °C 1 -55 °C Si
Vishay IRFR020TRPBF N-channel MOSFET, 14 A, 60 V, 3-Pin DPAK Vishay N 14 A 60 V 100 mΩ - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 42 W 640 pF @ 25 V 25 nC @ 10 V 6.73 x 6.22 x 2.38mm 25 ns - 13 ns - 2.38mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRFR210TRPBF N-channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK Vishay N 2.6 A 200 V 1.5 <ohm/> - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 25 W 140 pF @ 25 V 8.2 nC @ 10 V 6.73 x 6.22 x 2.38mm 14 ns - 8.2 ns 0.8s 2.38mm 6.22mm 6.73mm 2V +150 °C 1 -55 °C Si
Vishay IRFR310TRPBF N-channel MOSFET, 1.7 A, 400 V, 3-Pin DPAK Vishay N 1.7 A 400 V 3.6 Ω - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 25 W 170 pF@ 25 V 12 nC @ 10 V 6.73 x 6.22 x 2.38mm 21 ns - 7.9 ns - 2.38mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRFR430ATRPBF N-channel MOSFET, 5 A, 500 V, 3-Pin DPAK Vishay N 5 A 500 V 1.7 Ω - 2V -30 V, +30 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 110 W 490 pF@ 25 V 24 nC @ 10 V 6.73 x 6.22 x 2.38mm 17 ns - 8.7 ns - 2.38mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRFR9010TRPBF P-channel MOSFET, 5.3 A, 50 V, 3-Pin DPAK Vishay P 5.3 A 50 V 500 mΩ - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 25 W 240 pF@ -25 V 6.1 nC @ 10 V 6.73 x 6.22 x 2.38mm 13 ns - 6.1 ns - 2.38mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRFR9020TRPBF P-channel MOSFET, 9.9 A, 50 V, 3-Pin DPAK Vishay P 9.9 A 50 V 280 mΩ - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 42 W 490 pF@ -25 V 9.4 nC @ 10 V 6.73 x 6.22 x 2.38mm 12 ns - 8.2 ns - 2.38mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
Vishay IRFR9120TRPBF P-channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay P 5.6 A 100 V 600 mΩ - 2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement Power MOSFET 42 W 390 pF@ -25 V 18 nC @ 10 V 6.73 x 6.22 x 2.38mm 21 ns - 9.6 ns - 2.38mm 6.22mm 6.73mm - +150 °C 1 -55 °C Si
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