Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P6
Package Type
ThinPAK 5 x 6
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
0.36 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 Infineon IPL60R360P6SATMA1
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Standard
10
P.O.A.
N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 Infineon IPL60R360P6SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
10
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P6
Package Type
ThinPAK 5 x 6
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
0.36 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1