Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
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P.O.A.
Standard
5
P.O.A.
Standard
5
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance