Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Korea, Republic Of
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
30
P.O.A.
30
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Korea, Republic Of
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.