Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
86 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
272 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Country of Origin
China
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P.O.A.
STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
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Standard
5
P.O.A.
STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
Stock information temporarily unavailable.
Select packaging type
Standard
5
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
86 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
272 W
Number of Transistors
1
Package Type
D2PAK (TO-263)
Pin Count
3
Country of Origin
China