SRAM
SRAM stands for Static Random Access Memory and is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each bit. It holds data bits in its memory so long as power is being supplied. It cannot hold data if power is removed. SRAM is used where speed or low power are needed. It’s higher density than DRAM, and less complicated structure makes it ideal to ...
Showing 1-20 of 290 products
Alliance Memory
Memory SRAM
-
1MB
-
-
128k
-
-
-
55ns
-
-
-
-
-
Asynchronous
-
2.7V
5.5V
Surface
-
-40°C
SOP-32
32
-
85°C
-
-
-
RoHS
-
AS6C1008
-
-
-
-
No
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60mA
-
Alliance Memory
SRAM
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4MB
-
-
512K
-
-
-
55ns
-
-
-
-
-
Asynchronous
-
2.7V
5.5V
Surface
-
-40°C
SOP-32
32
-
85°C
-
-
-
RoHS
-
AS6C4008
-
-
-
-
No
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60mA
-
Microchip
SRAM
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1MB
-
-
128k
-
32
-
-
-
-
-
20MHz
-
-
-
1.7V
5.5V
-
-
-40°C
-
8
-
125°C
-
1.75mm
10.16mm
RoHS
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23
-
-
-
-
AEC-Q100
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3mA
-
P.O.A.
Check stock
1
Renesas Electronics
SRAM
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16kB
-
-
-
-
-
-
25ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
Surface
-
-40°C
Tube
24
-
85°C
-
-
-
REACH, RoHS
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6116LA25
-
-
-
-
No
-
95mA
-
P.O.A.
Check stock
2
Renesas Electronics
SRAM
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1MB
-
-
64K
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16
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15ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
Surface
-
-40°C
-
44
-
85°C
-
1mm
18.41mm
No
-
IDT71016
-
-
-
-
No
-
180mA
-
P.O.A.
Check stock
2
Renesas Electronics
SRAM
-
1MB
-
-
128k
-
8
-
12ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
Surface
-
0°C
TSOP-44
32
-
70°C
-
2.67mm
21.95mm
No
-
71024S
-
-
-
-
No
-
160mA
-
P.O.A.
Check stock
5
P.O.A.
Check stock
2
Renesas Electronics
SRAM
-
1MB
-
-
128k
-
8
-
15ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
-
-
-40°C
SOJ
32
-
85°C
-
-
-
No
-
71024
-
-
-
-
No
-
160mA
-
P.O.A.
Check stock
5
Renesas Electronics
SRAM
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1MB
-
-
64K
-
16
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10ns
-
-
-
-
-
Asynchronous
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3V
3.6V
-
-
-40°C
-
48
-
85°C
-
-
-
No
-
IDT71V016
-
-
-
-
No
-
160mA
-
P.O.A.
Check stock
1
Renesas Electronics
SRAM
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4MB
-
-
256K
-
16
-
15ns
-
-
-
-
-
Asynchronous
-
3.3V
3.3V
Surface
-
-40°C
SOJ-44
48
-
85°C
-
1mm
18.41mm
JEDEC Center Power/GND pinout
-
IDT71V416
-
-
-
-
No
-
180mA
-
P.O.A.
Check stock
1
Renesas Electronics
SRAM
-
1MB
-
-
256K
-
16
-
12ns
-
-
-
-
-
Asynchronous
-
3V
3.6V
Surface
-
0°C
SOJ-44
44
-
70°C
-
1mm
18.41mm
JEDEC
-
IDT71V416
-
-
-
-
No
-
180mA
-
Renesas Electronics
SRAM
-
1MB
-
-
64K
-
16
-
15ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
Surface
-
-40°C
-
44
-
85°C
-
1mm
18.41mm
No
-
IDT71016
-
-
-
-
No
-
180mA
-
Renesas Electronics
SRAM
-
1MB
-
-
256K
-
16
-
12ns
-
-
-
-
-
Asynchronous
-
3V
3.6V
Surface
-
0°C
SOJ-44
44
-
70°C
-
1mm
18.41mm
JEDEC
-
IDT71V416
-
-
-
-
No
-
180mA
-
Renesas Electronics
SRAM
-
1MB
-
-
64K
-
16
-
10ns
-
-
-
-
-
Asynchronous
-
3V
3.6V
-
-
-40°C
-
48
-
85°C
-
-
-
No
-
IDT71V016
-
-
-
-
No
-
160mA
-
Renesas Electronics
SRAM
-
1MB
-
-
128k
-
8
-
15ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
-
-
-40°C
SOJ
32
-
85°C
-
-
-
No
-
71024
-
-
-
-
No
-
160mA
-
Renesas Electronics
SRAM
-
1MB
-
-
128k
-
8
-
12ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
Surface
-
0°C
TSOP-44
32
-
70°C
-
2.67mm
21.95mm
No
-
71024S
-
-
-
-
No
-
160mA
-
Renesas Electronics
SRAM
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16kB
-
-
-
-
-
-
25ns
-
-
-
-
-
Asynchronous
-
4.5V
5.5V
Surface
-
-40°C
Tube
24
-
85°C
-
-
-
REACH, RoHS
-
6116LA25
-
-
-
-
No
-
95mA
-
Renesas Electronics
SRAM
-
4MB
-
-
256K
-
16
-
15ns
-
-
-
-
-
Asynchronous
-
3.3V
3.3V
Surface
-
-40°C
SOJ-44
48
-
85°C
-
1mm
18.41mm
JEDEC Center Power/GND pinout
-
IDT71V416
-
-
-
-
No
-
180mA
-
P.O.A.
Check stock
1
Alliance Memory
SRAM
-
1MB
-
-
128k
-
8
-
55ns
-
-
17bit
-
-
Asynchronous
-
2.7V
5.5V
Through Hole
-
0°C
PDIP
32
-
70°C
-
3.81mm
41.91mm
No
-
AS6C1008
-
-
-
-
No
-
-
-
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