Technical Document
Specifications
Brand
ams OSRAMSpectrums Detected
Infrared
Spectrum(s) Detected
Infrared
Maximum Light Current
80µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
±60 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
Chip LED
Dimensions
2.1 x 0.95 x 1.35mm
Collector Current
20mA
Minimum Wavelength Detected
470nm
Maximum Wavelength Detected
670nm
Spectral Range of Sensitivity
470 → 670 nm
Height
1.35mm
Length
2.1mm
Width
0.95mm
Country of Origin
Malaysia
Product details
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Adapted to human eye sensitivity (Vλ)
Ambient Light Sensors, OSRAM Opto Semiconductors
P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
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Technical Document
Specifications
Brand
ams OSRAMSpectrums Detected
Infrared
Spectrum(s) Detected
Infrared
Maximum Light Current
80µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
±60 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
Chip LED
Dimensions
2.1 x 0.95 x 1.35mm
Collector Current
20mA
Minimum Wavelength Detected
470nm
Maximum Wavelength Detected
670nm
Spectral Range of Sensitivity
470 → 670 nm
Height
1.35mm
Length
2.1mm
Width
0.95mm
Country of Origin
Malaysia
Product details
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Adapted to human eye sensitivity (Vλ)